San Francisco — Applied Materials Inc. took a big step into the high-k/metal-gate arena last week, rolling out a trio of tools for advanced gate-stack and related applications at 45 nanometers. Intel ...

In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...

Dynamic Random Access Memory (DRAM) serves as the backbone of modern computing, enabling devices ranging from smartphones to high-performance servers. As the demand accelerates for higher density and ...

Both calling the technology some of the biggest advancements in fundamental transistor design, Intel and IBM separately reported over the weekend that they are both leveraging new materials to build ...